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| inchange semiconductor isc product specification isc silicon npn power transistor 2SC5248 description collector-emitter breakdown voltage- : v (br)ceo = 160v(min) good linearity of h fe wide area of safe operation complement to type 2sa1964 applications power amplifier applications. driver stage amplifier applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 160 v v ceo collector-emitter voltage 160 v v ebo emitter-base voltage 5 v i c collector current-continuous 1.5 a collector power dissipation @t a =25 2 p c collector power dissipation @t c =25 20 w t j junction temperature 150 t stg storage temperature -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC5248 electrical characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 1ma; i b = 0 b 160 v v (br)cbo collector-base breakdown voltage i c = 50 a; i e = 0 160 v v (br)ebo emitter-base breakdown voltage i e = 50 a; i c = 0 5 v v ce (sat) collector-emitter saturation voltage i c = 1a; i b = 0.1a b 1.0 v i cbo collector cutoff current v cb = 160v; i e = 0 1.0 a i ebo emitter cutoff current v eb = 4v; i c = 0 1.0 a h fe dc current gain i c = 0.1a; v ce = 5v 60 200 f t current-gain?bandwidth product i c = 0.2a; v ce = 10v 150 mhz c ob output capacitance i e = 0; v cb = 10v; f= 1mhz 20 pf ? h fe classifications d e 60-120 100-200 isc website www.iscsemi.cn 2 |
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